PART |
Description |
Maker |
BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit DDR-II SRAM 2-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 36-Mbit QDR-II SRAM 4-Word Burst Architecture Fuse 256K (32K x 8) Static RAM 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Neuron® Chip Network Processor 64-Kbit (8K x 8) Static RAM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
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M5LV-320_192-10AI M5LV-512_104-6AC M5-192_74-15YC |
IND SHLD 3.3UH 9A RMS SMT Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP160 Fifth Generation MACH Architecture EE PLD, 12 ns, PBGA256 Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208 Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP240 Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP144 Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208 10-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 12 ns, PQFP144 12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Commercial EE PLD, 15 ns, PQFP144 12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 15 ns, PQFP144 Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP240 CONNECTOR ACCESSORY EE PLD, 10 ns, PQFP100 Fifth Generation MACH Architecture EE PLD, 7.5 ns, PBGA352 Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP100 Fifth Generation MACH Architecture EE PLD, 20 ns, PBGA352 Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160 Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA352 Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160 Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP160 Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP240 Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA256 Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP240 Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP208 Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208 Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208 CONNECTOR ACCESSORY EE PLD, 12 ns, PQFP100 Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100 Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP240 Fifth Generation MACH Architecture
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation
|
PRESENTATION |
Presentation - AMDNext Generation Microprocessor Architecture AMDs Next Generation Microprocessor Architecture
|
Advanced Micro Devices
|
CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1333 7C1333 CY7C1333-66AC CY7C1333-50AC |
64Kx32 Flow-Thru SRAM with NoBL Architecture(B>NoBL结构4Kx32流通式 SRAM) 64Kx32 Flow-Thru SRAM with NoBL⑩ Architecture From old datasheet system
|
Cypress Semiconductor Corp.
|
CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV |
Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165 72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1315AV18-250BZC CY7C1311AV18 CY7C1311AV18-167B |
18-Mb QDR(TM)-II SRAM 4-Word Burst Architecture 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
CY7C1460AV33-167AXC CY7C1460AV33 CY7C1460AV33-167A |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
CY7C1352G06 CY7C1352G-250AXC CY7C1352G-250AXI CY7C |
4-Mbit (256K x 18) Pipelined SRAM with NoBL⑩ Architecture 4-Mbit (256K x 18) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
CY7C1314BV18 CY7C1312BV18 |
18-Mbit QDR庐 II SRAM Two-Word Burst Architecture 18-Mbit QDR? II SRAM Two-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1410JV18-267BZC CY7C1410JV18-267BZI CY7C1410JV |
36-Mbit QDR垄芒-II SRAM 2-Word Burst Architecture 36-Mbit QDR?II SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
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